کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7223434 | 1470559 | 2018 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Negative electron affinity GaN photocathode with Mg delta-doping
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Negative electron affinity GaN photocathode with Mg delta-doping Negative electron affinity GaN photocathode with Mg delta-doping](/preview/png/7223434.png)
چکیده انگلیسی
Mg δ-doping GaN material is grown by MOCVD and activated by Cs/O in UHV subsequently, then NEA GaN photocathode can be obtained. Compared with the p-type uniform doping, the δ-doping NEA GaN photocathode shows better photoemission performance, and the photocurrent is twice as the uniform. The QE of δ-doping and uniform doping are 24% and 10% at 5.16â¯eV, respectively. The hole concentration of δ-doping and uniform doping are 8.7â¯Ãâ¯1017â¯cmâ3 and 3.3â¯Ãâ¯1017â¯cmâ3, while better crystal quality for δ-doping is proved by the XRD results simultaneously. Profited from the higher hole concentration and better crystal quality, the P and L of δ-doping NEA GaN photocathodes are raised to 0.51 and 258â¯nm, respectively. After introduction of O during the activation, the photocurrent of uniform doping GaN photocathode has obvious improvement, however, it is even worse than before for the δ-doping. On the basis of [GaN(Mg)- Cs]:[O-Cs] model, it is found that the surface roughness is beneficial for improving photocurrent during the Cs/O alternating activation stage.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optik - Volume 168, September 2018, Pages 278-281
Journal: Optik - Volume 168, September 2018, Pages 278-281
نویسندگان
Xiaohui Wang, Yijun Zhang,