The effects of intense laser field on optical responses of n-type delta doped GaAs quantum well under applied electric and magnetic fields

This work presents the results of the theoretical study of the effects of non-resonant intense laser field, electric and magnetic fields on optical responses of GaAs n-type δ-doped quantum well associated to the electron transitions. Optical properties are obtained by using the compact-density matrix method. The numerical results show that the applied external fields have a significant effect on the optical characteristics of these structures, such as the optical absorption coefficient and refractive index. Thus, such futures can be use to tune the optical properties of doped semiconductor heterostructures.