کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7225379 1470573 2018 17 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Modulation of band gap by normal strain in SiC-based heterostructures
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی (عمومی)
پیش نمایش صفحه اول مقاله
Modulation of band gap by normal strain in SiC-based heterostructures
چکیده انگلیسی
The structure and electronic properties of Ge/SiC van der Waals (vdW) heterostructures under the influence of normal strain have been investigated by the first-principles method. Without a strain, the system shows a small band gap of 126 meV. By applying a normal strain, the band gap monotonically decreases from 126 to 0 meV. Our results reveal that the compressive strain has much influence on the band gap of the bilayer. The variations of band gap are owing to different states of Ge, Si, and C atoms in the conduction band and valence band. Moreover, electrons among Ge/SiC vdW heterostructures are likely to transfer from germanene to SiC monolayer due to the deeper potential of SiC monolayer. The predicted normal strain tunable band gap of the Ge/SiC vdW heterostructures is very promising for its potential use in nanodevices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optik - Volume 154, February 2018, Pages 634-639
نویسندگان
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