40 Gbit/s electroabsorption modulated distributed feedback laser

A 40 Gbit/s multi-quantum well (MQW) electroabsorption modulator (EAM) with a lumped electrode monolithically integrated with a distributed feedback (DFB) laser is demonstrated. Superior characteristics are exhibited for the device, such as low threshold current of 18 mA, over 40 dB side-mode suppression ratio at 1 550 nm and more than 30 dB extinction ratio when coupled into a single-mode fiber. By adopting deep ridge waveguide and planar electrode structures combined with buried benzocyclobutene (BCB), the capacitance of the EAM is reduced down to 0.18 pF and over 33 GHz modulation bandwidth at a small signal has been demonstrated. Negative chirp operation is realized when the bias voltage is beyond 1.6 V.