کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
737637 1461912 2012 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Quantum dots photoluminescence based thin film thermal conductivity metrology
موضوعات مرتبط
مهندسی و علوم پایه شیمی الکتروشیمی
پیش نمایش صفحه اول مقاله
Quantum dots photoluminescence based thin film thermal conductivity metrology
چکیده انگلیسی

Studying thin film thermal conduction is important in the development of many heat related sensors, actuators and microsystems. Emerging non-contact metrologies of membrane thermal conductivity show several advantages when devices are scaling down or novel materials are utilized. In this paper, a method to evaluate membrane thermal conductivity using CdSe/ZnS quantum dots as temperature markers is presented. As an example, the thermal conductivity of 290 nm-thick crystalline silicon thin film is measured as 106 ± 15 W/(m K). Compared to conventional methods, the features of this method, such as fine spatial resolution and non-contact temperature probe, bring the measurement robustness against ambient disturbance and the reduction on measurement system error. Furthermore, this metrology is eligible for thin films of other materials.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Sensors and Actuators A: Physical - Volume 188, December 2012, Pages 255–260
نویسندگان
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