Magnetic field sensors built from slightly crystallographic mismatched thin films of In0.53Ga0.47As/InP obtained by MBE and MOCVD

We report the key galvanomagnetic properties of Hall and magnetoresistor cross-shaped sensors with lateral dimensions 2 mm × 3 mm. The measured parameters of these devices gave an interesting insight into their behavior at temperatures ranging from LHe to room temperature. The large changes of the galvanomagnetic parameters versus magnetic field and temperature allow these devices to be used as field or temperature sensors.