کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
741404 894237 2008 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Gate modulation in carbon nanotube field effect transistors-based NH3 gas sensors
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی آنالیزی یا شیمی تجزیه
پیش نمایش صفحه اول مقاله
Gate modulation in carbon nanotube field effect transistors-based NH3 gas sensors
چکیده انگلیسی

Single-walled carbon nanotube field effect transistors (CNTFETs) are used as NH3 gas sensors and their sensing performances are studied in terms of gate biasing effect. By applying a positive gate bias, a high sensitivity of 178.5% per ppm is achieved. The reversibility of the CNTFET sensors is also found to be significantly improved under the appropriate positive gate voltages. In this study, an in-depth understanding of how the electrical properties of the CNTFETs are affected by NH3 gas is gained.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Sensors and Actuators B: Chemical - Volume 132, Issue 1, 28 May 2008, Pages 191–195
نویسندگان
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