کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
746038 | 894439 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Intrinsic hydrogen-terminated diamond as ion-sensitive field effect transistor
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی آنالیزی یا شیمی تجزیه
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Ion-sensitive field-effect transistors (ISFET) are fabricated using intrinsic hydrogen-terminated mono-crystalline diamond films. Transistor properties are realized by a surface conductive channel on hydrogen-terminated diamond. The gating is realized by immersing the diamond surface into electrolyte solution which is contacted by a platinum electrode. Hydrogen termination of diamond surface acts as a gate insulation without any additional oxide layer. The response of gate potential to pH is about −56−56 mV/pH. The results are discussed in terms of transfer doping mechanism, Nernst equation, and electrochemical properties of diamond surfaces. They are also compared with ISFETs which employ ion-sensitive gate oxides.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Sensors and Actuators B: Chemical - Volume 122, Issue 2, 26 March 2007, Pages 596–599
Journal: Sensors and Actuators B: Chemical - Volume 122, Issue 2, 26 March 2007, Pages 596–599
نویسندگان
B. Rezek, D. Shin, H. Watanabe, C.E. Nebel,