کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
758750 | 896449 | 2011 | 12 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Application of the homotopy analysis method to the Poisson–Boltzmann equation for semiconductor devices
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی مکانیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Application of the homotopy analysis method to the Poisson–Boltzmann equation for semiconductor devices Application of the homotopy analysis method to the Poisson–Boltzmann equation for semiconductor devices](/preview/png/758750.png)
چکیده انگلیسی
This paper describes the application of a recently developed analytic approach known as the homotopy analysis method to derive an approximate solution to the nonlinear Poisson–Boltzmann equation for semiconductor devices. Specifically, this paper presents an analytic solution to potential distribution in a DG-MOSFET (Double Gate-Metal Oxide Semiconductor Field Effect Transistor). The DG-MOSFET represents one of the most advanced device structures in semiconductor technology and is a primary focus of modeling efforts in the semiconductor industry.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Communications in Nonlinear Science and Numerical Simulation - Volume 16, Issue 6, June 2011, Pages 2501–2512
Journal: Communications in Nonlinear Science and Numerical Simulation - Volume 16, Issue 6, June 2011, Pages 2501–2512
نویسندگان
Christopher J. Nassar, Joseph F. Revelli, Robert J. Bowman,