کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7670224 1495176 2018 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Micro-Raman imaging on 4H-SiC in contact with the electrode at room temperature
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی آنالیزی یا شیمی تجزیه
پیش نمایش صفحه اول مقاله
Micro-Raman imaging on 4H-SiC in contact with the electrode at room temperature
چکیده انگلیسی
Raman images of a 4H-SiC wafer in contact with a Ni/Au electrode film 100-nm/200-nm thick have been measured by micro-Raman spectroscopy at room temperature. As the imaging area approached the interface between SiC and electrode, the center frequency of the E2(TO) mode showed an immediate downturn, and in Raman imaging showed relative distribution of compressive residual stress around residual tensile stress. For the LOPC mode, the center frequency varied immediately near the interface, while linewidth decreased slowly as the imaging area approached the interface.123
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy - Volume 193, 15 March 2018, Pages 393-396
نویسندگان
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