کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7696418 1496536 2018 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Fabrication of low-resistance LaNixO3+δ thin films for ferroelectric device electrodes
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی (عمومی)
پیش نمایش صفحه اول مقاله
Fabrication of low-resistance LaNixO3+δ thin films for ferroelectric device electrodes
چکیده انگلیسی
Resistivity of LaNixO3+δ films on Si substrates. Highly (110)-oriented LaNixO3+δ thin films were prepared on Si (100) substrates by the sol-gel method. It is proved that the LaNixO3+δ film has the lowest electrical resistivity when La/Ni ratio is 1:0.95. Furthermore, the electrical resistivity decreased as the annealing temperature increased from 600 to 700 °C. The electrical resistivity change of LaNixO3+δ was explained by first-principles studies.117
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Rare Earths - Volume 36, Issue 8, August 2018, Pages 838-843
نویسندگان
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