Fabrication of low-resistance LaNixO3+δ thin films for ferroelectric device electrodes

Resistivity of LaNixO3+δ films on Si substrates. Highly (110)-oriented LaNixO3+δ thin films were prepared on Si (100) substrates by the sol-gel method. It is proved that the LaNixO3+δ film has the lowest electrical resistivity when La/Ni ratio is 1:0.95. Furthermore, the electrical resistivity decreased as the annealing temperature increased from 600 to 700 °C. The electrical resistivity change of LaNixO3+δ was explained by first-principles studies.117