Annealing and doping-dependent magnetoresistance in single layer poly(3-hexyl-thiophene) organic semiconductor device

In a single Au/P3HT(350 nm)/Al device under different forward drive conditions, the negative MC response at high current densities displays an ∼1 order of magnitude increase after annealing above the glass transition temperature of P3HT. After 60 min re-doping through photo-oxidization the low current density MC is obtained.