کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7744435 | 1498224 | 2018 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of film thickness and strain state on the structure, magnetic and transport properties of La0.9Sr0.1CoO3 films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
الکتروشیمی
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
In this paper, we investigate the effects of film thickness and strain state on the structure, magnetism and electrical transport properties of La0.9Sr0.1CoO3 (LSCO) thin films. The x-ray diffraction analysis shows that the out-of-plane lattice parameters of LSCO films grown on different substrates gradually approach those of the bulk LSCO with increasing film thickness, indicating that the strain induced by the substrates is partially relaxed in thick films, i.e. 100â¯nm. The film magnetism is gradually enhanced with increasing film thickness. For the 20-nm-thick film, it is almost non-magnetic. However, the film becomes ferromagnetic when its thickness increases up to 100â¯nm. The magnetism is stronger for the film under compressive strain than that under tensile strain. The change in the magnetic properties of films is attributed to the lattice strain, which can affect the spin state of Co ions. Regarding the conductivity, all the samples show a semiconducting-like behavior, and the resistivity is inversely proportional to the film thickness. The electrical transport mechanism of the films with different thickness transforms from a three-dimensional variable range hopping (VRH) to a small-polaron hopping conduction (SPC) with increasing temperature. Fascinatingly, the temperature for transport mechanism transformation decreases gradually with increasing film thickness. This work could shed light on the electrical transport mechanism of LSCO films with different thickness.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Ionics - Volume 319, June 2018, Pages 28-33
Journal: Solid State Ionics - Volume 319, June 2018, Pages 28-33
نویسندگان
Chengpeng Yang, Bin Liu, Guiju Liu, Feiyu Diao, Huaiwen Yang, Yiqian Wang,