Study of Raman peak shift under applied isostatic pressure in rare-earth-doped ceria for evaluation of quantitative stress conditions in SOFCs

► Raman peak shift of rare-earth-doped ceria under isostatic pressure was measured. ► Isostatic pressure dependence of rare-earth-doped ceria differs from pure ceria. ► The relationship between the Raman peak shift and anisotropic stress is obtained. ► Raman peak shifts by about 2 cm− 1 for change of 1 GPa in the anisotropic stress.