Qualitative analysis of growth mechanism of polycrystalline InAs thin films grown by molecular beam epitaxy

The mechanism of surfaces/interfaces and precise control of growth morphology is a key parameter for any specific device application. Herein, we report on a qualitative growth study of molecular beam epitaxy-grown polycrystalline InAs thin films on a lattice-mismatched Si(1 0 0) substrate using atomic force microscopy. The height-height correlation function (HHCF) and power spectral density function (PSDF) were employed to analyze the surface structures. Clear oscillatory behavior in the HHCF for sufficiently larger lateral distances suggests a mound-like morphology, which was confirmed by the existence of a characteristic frequency peak in the PSDF. The growth mechanism is described qualitatively by the Schwoebel barrier (roughening) effect coupled with the Mullins diffusion model (smoothing effect).