کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7832725 | 1503512 | 2018 | 23 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Formation of extended thermal etch pits on annealed Ge wafers
ترجمه فارسی عنوان
تشکیل چاله های تمدید حرارتی بر روی ورقه های خاردار گرم
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
چکیده انگلیسی
An extended formation of faceted pit-like defects on Ge(0â¯0â¯1) and Ge(1â¯1â¯1) wafers was obtained by thermal cycles to Tâ¯>â¯750â¯Â°C. This temperature range is relevant in many surface-preparation recipes of the Ge surface. The density of the defects depends on the temperature reached, the number of annealing cycles performed and correlates to the surface-energy stability of the specific crystal orientation. We propose that the pits were formed by preferential desorption from the strained regions around dislocation pile-ups. Indeed, the morphology of the pits was the same as that observed for preferential chemical etching of dislocations while the spatial distribution of the pits was clearly non-Poissonian in line with mutual interactions between the core dislocations.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 462, 31 December 2018, Pages 86-94
Journal: Applied Surface Science - Volume 462, 31 December 2018, Pages 86-94
نویسندگان
L. Persichetti, M. Fanfoni, M. De Seta, L. Di Gaspare, L. Ottaviano, C. Goletti, A. Sgarlata,