Transmission electron microscopy and high-resolution electron microscopy studies of structural defects induced in Si single crystals implanted by helium ions at 600 °C

The implantation-induced defects of crystalline silicon implanted with helium ions to a dose of 5 × 1016/cm2 at 600 °C were investigated. The sample was analyzed by transmission electron microscopy and high-resolution electron microscopy. Faceted cavities are observed in the damaged layer. Concurrently the distribution of interstitial-type defect clusters was investigated by conventional electron microscopy in bright and dark field. Many rod-like defects, which belong to {1 1 3}, {1 1 1} and (−2 0 0), are formed in the end of the projected range. In front of the damaged layer, some ribbon-like defects are formed, which belong to 〈2 0 0〉, 〈1 −1 1〉 and 〈1 3 −3〉. The possible reasons of the observed defect clusters are discussed.