Facile, scalable and transfer free vertical-MoS2 nanostructures grown on Au/SiO2 patterned electrode for photodetector application

Transition metal dichalcogenides such as molybdenum disulfide (MoS2) have attracted considerable attention for use in optoelectronic devices. However, their large scale monolayer production seems to be limited due to scalability, layers size and fabrication process. While, a prominent photoluminescence was reported for vertically aligned MoS2 (V-MoS2) nanosheets similar to MoS2 mono- and few- layer, as highly promising counterparts for development of optoelectronic devices. Here, we report a systematic method to fabricate V-MoS2 nanosheets using a chemical vapor deposition (CVD) technique. The growing density and morphology of V-MoS2 nanosheets are controlled by adjusting growth parameters. The V-MoS2 nanosheets form in 2H phase and have thickness of ∼10-80 nm and the lateral dimension of 1-2.5 μm. Furthermore, a photodetector platform is fabricated based on V-MoS2 nanosheets with considerable performance and transfer free process with scalable manufacturing ability. The V-MoS2 nanosheets are directly deposited on and within patterned gold leads made on SiO2 substrate to immediately form arrays of photodetector. Optical and electrical response of such a photodetector is examined at different wavelengths and light powers. Such a facile fabrication can convey to a straightforward approach for large scale and transfer free implementing V-MoS2 nanosheets in optoelectronic elements.