Confined selective lateral epitaxial growth of 16-nm thick Ge nanostructures on SOI substrates: Advantages and challenges

Confined selective lateral epitaxial growth of 16-nm thick Ge nanostructures on SOI substrates: Advantages and challenges

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 445, 1 July 2018, Pages 77-80

Rami Khazaka, Yann Bogumilowicz, Denis Rouchon, Hervé Boutry, Zdenek Chalupa, Valérie Lapras, Bernard Prévitali, Nicolas Chevalier, Anne Marie Papon, Sylvain David, Sylvain Maitrejean,