Atomic layer deposition of sub-10 nm high-K gate dielectrics on top-gated MoS2 transistors without surface functionalization

Atomic layer deposition of sub-10 nm high-K gate dielectrics on top-gated MoS2 transistors without surface functionalization

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 443, 15 June 2018, Pages 421-428

Yu-Shu Lin, Po-Hsien Cheng, Kuei-Wen Huang, Hsin-Chih Lin, Miin-Jang Chen,