Keywords: دیود الکتریکی گیت بالا; High-K gate dielectrics; In-situ atomic layer doping; Post-deposition nitridation; Zirconium oxide; Atomic layer deposition;
مقالات ISI دیود الکتریکی گیت بالا (ترجمه نشده)
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Atomic layer deposition of sub-10â¯nm high-K gate dielectrics on top-gated MoS2 transistors without surface functionalization
Keywords: دیود الکتریکی گیت بالا; MoS2; Two-dimensional materials; Field-effect transistors; Atomic layer deposition (ALD); High-K gate dielectrics;
Analysis of the electrical properties and current transportation mechanism of a metal oxide semiconductor (MOS) capacitor based on HfGdO gate dielectrics
Keywords: دیود الکتریکی گیت بالا; High-k gate dielectrics; HfGdO; Electrical properties; Metal oxide semiconductor (MOS) transistors; Leakage current density;
Interfacial modulation and electrical properties improvement of solution-processed ZrO2 gate dielectrics upon Gd incorporation
Keywords: دیود الکتریکی گیت بالا; High-k gate dielectrics; Gd incorporation; XPS; Electrical properties; Sol-gel;
Nitrogen-concentration modulated interface quality, band alignment and electrical properties of HfTiON/Ge gate stack pretreated by trimethylaluminum precursor
Keywords: دیود الکتریکی گیت بالا; High-k gate dielectrics; Nitrogen incorporation; Interface quality; Electrical properties;
Modulation of interfacial and electrical properties of HfGdO/GaAs gate stacks by ammonium sulfide passivation and rapid thermal annealing
Keywords: دیود الکتریکی گیت بالا; High-k gate dielectrics; Interface chemistry; XPS; Electrical properties; CMOS devices;
Reliability characterization of SiON and MGHK MOSFETs using flicker noise and its correlation with the bias temperature instability
Keywords: دیود الکتریکی گیت بالا; Low-frequency noise; High-K gate dielectrics; Poly-Si/SiON dielectrics; Bias temperature instability; Interface traps;
Microstructural, surface and interface properties of zirconium doped HfO2 thin films grown by RF co-sputtering technique
Keywords: دیود الکتریکی گیت بالا; High-k gate dielectrics; Hf1-xZrxO2 films; Reactive co-sputtering; XPS; Surface and interface characterizations;
Microstructure, optical and electrical properties of solution-derived peroxo-zirconium oxide gate dielectrics for CMOS application
Keywords: دیود الکتریکی گیت بالا; C. Electrical properties; Metal-oxide-semiconductor; Sol–gel; Conduction mechanisms; High-k gate dielectrics
Modification of optical and electrical properties of sol-gel-derived TiO2-doped ZrO2 gate dielectrics by annealing temperature
Keywords: دیود الکتریکی گیت بالا; High-k gate dielectrics; Optical constant; Electrical properties; Ti incorporation; Sol-gel; Conduction mechanisms;
Microstructure, optical and electrical properties of sputtered HfTiO high-k gate dielectric thin films
Keywords: دیود الکتریکی گیت بالا; C. Electrical properties; High-k gate dielectrics; Metal–oxide–semiconductor; Conduction mechanisms; Sputtering
Microstructure, optical, electrical properties, and leakage current transport mechanism of sol-gel-processed high-k HfO2 gate dielectrics
Keywords: دیود الکتریکی گیت بالا; High-k gate dielectrics; Sol-gel; Electrical properties; Leakage current transport mechanism; Optical properties;
Deposition-power-modulated optical and electrical properties of sputtering-derived HfTiOx gate dielectrics
Keywords: دیود الکتریکی گیت بالا; High-k gate dielectrics; Hafnium titanate; Deposition power; Optical properties; Electrical properties;
Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability
Keywords: دیود الکتریکی گیت بالا; Atomic layer deposition; High-K gate dielectrics; Zirconium oxide; Buffer layer; Nitridation;
Local structure and energy-band alignment of HfO2 and HfO2-La2O3 on strained Si0.65Ge0.35
Keywords: دیود الکتریکی گیت بالا; High-k gate dielectrics; EXAFS; XPS; Interface; Band-structure;
Enhancement of electrical characteristics and reliability in crystallized ZrO2 gate dielectrics treated with in-situ atomic layer doping of nitrogen
Keywords: دیود الکتریکی گیت بالا; High-K gate dielectrics; In-situ atomic layer doping; Zirconium oxide; Remote plasma; Atomic layer deposition;
Microstructure optimization and optical and interfacial properties modulation of sputtering-derived HfO2 thin films by TiO2 incorporation
Keywords: دیود الکتریکی گیت بالا; High-k gate dielectrics; TiO2-doped HfO2; RF sputtering; Optical constant;
Interfacial thermal stability and band alignment of Al2O3/HfO2/Al2O3/Si gate stacks grown by atomic layer deposition
Keywords: دیود الکتریکی گیت بالا; High-k gate dielectrics; Annealing temperature; X-ray photoelectron; Spectroscopy; Band alignment
Millisecond flash lamp annealing for LaLuO3 and LaScO3 high-k dielectrics
Keywords: دیود الکتریکی گیت بالا; High-k gate dielectrics; Higher-k gate dielectrics; Ternary high-k oxides; Rare-earth based gate oxides; Electrical properties;
Comparative study of electrical characteristics in (1Â 0Â 0) and (1Â 1Â 0) surface-oriented nMOSFETs with direct contact La-silicate/Si interface structure
Keywords: دیود الکتریکی گیت بالا; High-k gate dielectrics; Rare earth oxides; Silicate; Interface property; Surface orientation;
Compensation of oxygen defects in La-silicate gate dielectrics for improving effective mobility in high-k/metal gate MOSFET using oxygen annealing process
Keywords: دیود الکتریکی گیت بالا; High-k gate dielectrics; Rare earth oxides; Silicate; Oxygen vacancy; Effective mobility
Thermal stability and chemical bonding states of AlOxNy/Si gate stacks revealed by synchrotron radiation photoemission spectroscopy
Keywords: دیود الکتریکی گیت بالا; High-k gate dielectrics; Thermal stability; Chemical bonding states; Synchrotron radiation; Photoemission spectroscopy;
HfAlOx high-k gate dielectric on SiGe: Interfacial reaction, energy-band alignment, and charge trapping properties
Keywords: دیود الکتریکی گیت بالا; High-k gate dielectrics; HfAlOx; Band offset; SiGe; Interface
The properties of high-k gate dielectric films deposited on HRSOI
Keywords: دیود الکتریکی گیت بالا; High-k gate dielectrics; Al2O3; HRSOI
Electrical properties of atomic-layer-deposited La2O3 films using a novel La formamidinate precursor and ozone
Keywords: دیود الکتریکی گیت بالا; Atomic layer deposition (ALD); La formamidinate precursors; Ozone; La2O3; High-k gate dielectrics
Amorphous ternary rare-earth gate oxides for future integration in MOSFETs
Keywords: دیود الکتریکی گیت بالا; High-k gate dielectrics; Higher-k gate dielectrics; Ternary high-k oxides; Rare-earth based gate oxides; Electrical properties
Interfacial transition regions at germanium/Hf oxide based dielectric interfaces: Qualitative differences between non-crystalline Hf Si oxynitride and nanocrystalline HfO2 gate stacks
Keywords: دیود الکتریکی گیت بالا; High-K gate dielectrics; MOS devices; Interfacial transition regions; X-ray absorption spectroscopy; Spectroscopic ellipsometry; Di-vacancy defects; Native Ge dielectrics; Ge substrates
Interface characteristics of ZrO2 high-k gate dielectrics on epitaxial Ge capacitor layers after thermal desorption of Ge native oxide and Ge nitridation
Keywords: دیود الکتریکی گیت بالا; Germanium; Metal-oxide-semiconductor capacitors; High-k gate dielectrics; X-ray diffraction; Atomic layer deposition; Zirconium oxide
Application of spectroscopic photoemission and low energy electron microscope to high-k gate dielectrics: Relationship between surface morphology and electronic states during Hf-silicide formation
Keywords: دیود الکتریکی گیت بالا; High-k gate dielectrics; Vacuum annealing; PEEM; Electronic states; Microregion photoelectron spectroscopy;
Performance of current mirror with high-k gate dielectrics
Keywords: دیود الکتریکی گیت بالا; Current mirror; High-k gate dielectrics; Gate leakage; Channel length modulation
Optical and electrical properties of plasma-oxidation derived HfO2 gate dielectric films
Keywords: دیود الکتریکی گیت بالا; High-k gate dielectrics; HfO2 thin films; Plasma oxidation; Optical properties; Interfacial layer;
Structural and optical properties of nitrogen-incorporated HfO2 gate dielectrics deposited by reactive sputtering
Keywords: دیود الکتریکی گیت بالا; High-k gate dielectrics; HfO2 thin films; Optical properties; Interfacial layer; Sputtering;
Interfacial microstructure of NiSix/HfO2/SiOx/Si gate stacks
Keywords: دیود الکتریکی گیت بالا; High-k gate dielectrics; Interfacial reaction; TEM;
Interface reactions at TiN/HfSiON gate stacks: Dependence on the electrode structure and deposition method
Keywords: دیود الکتریکی گیت بالا; High-k gate dielectrics; Metal electrode; Thermal stability; Interface reaction; Electrical degradation; Hafnium silicate; Titanium nitride;
Parameter extraction using novel phenomena in nano-MOSFETs with ultra-thin (EOT = 0.46–1.93 nm) high-K gate dielectrics
Keywords: دیود الکتریکی گیت بالا; Channel doping density; High-K gate dielectrics; Parameter extraction; Flat-band voltage
Physical and electrical properties of ZrO2 and YSZ high-k gate dielectric thin films grown by RF magnetron sputtering
Keywords: دیود الکتریکی گیت بالا; RF magnetron sputtering; ZrO2 films; YSZ films; High-k gate dielectrics; Leakage current;
HfAlON films fabricated by pulsed laser ablation for high-k gate dielectric applications
Keywords: دیود الکتریکی گیت بالا; 77.55.+f; 81.15.Fg; 73.40.Qv; HfAlON thin films; Pulsed laser deposition; High-k gate dielectrics;
Tunneling 1/fγ noise in 5 nm HfO2/2.1 nm SiO2 gate stack n-MOSFETs
Keywords: دیود الکتریکی گیت بالا; Flicker noise; High-k gate dielectrics; Tunneling;