Analysis of the electrical properties and current transportation mechanism of a metal oxide semiconductor (MOS) capacitor based on HfGdO gate dielectrics

Analysis of the electrical properties and current transportation mechanism of a metal oxide semiconductor (MOS) capacitor based on HfGdO gate dielectrics

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 757, 15 August 2018, Pages 288-297

S.S. Jiang, G. He, Z.B. Fang, P.H. Wang, Y.M. Liu, J.G. Lv, M. Liu,