کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
543240 | 871644 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The properties of high-k gate dielectric films deposited on HRSOI
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: The properties of high-k gate dielectric films deposited on HRSOI The properties of high-k gate dielectric films deposited on HRSOI](/preview/png/543240.png)
چکیده انگلیسی
In this paper, HfO2 dielectric films with blocking layers (BL) of Al2O3 were deposited on high resistivity silicon-on-insulator (HRSOI), and the interfacial and electrical properties are reported. High-resolution transmission electron microscopy (HRTEM) indicated that BL could thin the interfacial layer, keep the interface smooth, and retain HfO2 amorphous after annealing. Energy dispersive X-ray spectroscopy (EDS) and X-ray photoelectron spectroscopy (XPS) confirmed that BL weaken Si diffusion and suppressed the further growth of HfSiO. Electrical measurements indicated that there was no hysteresis was observed in capacitance–voltage curves, and Flatband shift and interface state density is 0.05 V and −1.3 × 1012 cm−2, respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 86, Issue 12, December 2009, Pages 2404–2407
Journal: Microelectronic Engineering - Volume 86, Issue 12, December 2009, Pages 2404–2407
نویسندگان
Xinhong Cheng, Dapeng Xu, Zhaorui Song, Dawei He, Yuehui Yu, Qingtai Zhao, DaShen Shen,