کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7835379 1503533 2018 22 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Electrically driven plasmon-exciton coupled random lasing in ZnO metal-semiconductor-metal devices
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Electrically driven plasmon-exciton coupled random lasing in ZnO metal-semiconductor-metal devices
چکیده انگلیسی
Electrically driven plasmon-exciton coupled random lasing is demonstrated by incorporating Ag nanoparticles on Cu-doped ZnO metal-semiconductor-metal (MSM) devices. Both photoluminescence and electroluminescence studies show that emission efficiencies have been enhanced significantly due to coupling between ZnO excitons and Ag surface plasmons. With the incorporation of Ag nanoparticles on ZnO MSM structures, internal quantum efficiency up to 6 times is demonstrated. Threshold current for lasing is decreased by as much as 30% while the output power is increased up to 350% at an injection current of 40 mA. A numerical simulation study reveals that hole carriers are generated in the ZnO MSM devices from impact ionization processes for subsequent plasmon-exciton coupled lasing.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 439, 1 May 2018, Pages 525-532
نویسندگان
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