کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7835391 1503532 2018 18 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Angular dependent XPS study of surface band bending on Ga-polar n-GaN
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Angular dependent XPS study of surface band bending on Ga-polar n-GaN
چکیده انگلیسی
Surface band bending and composition of Ga-polar n-GaN with different surface treatments were characterized by using angular dependent X-ray photoelectron spectroscopy. Upward surface band bending of varying degree was observed distinctly upon to the treatment methods. Besides the nitrogen vacancies, we found that surface states of oxygen-containing absorbates (O-H component) also contribute to the surface band bending, which lead the Fermi level pined at a level further closer to the conduction band edge on n-GaN surface. The n-GaN surface with lower surface band bending exhibits better linear electrical properties for Ti/GaN Ohmic contacts. Moreover, the density of positively charged surface states could be derived from the values of surface band bending.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 440, 15 May 2018, Pages 637-642
نویسندگان
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