کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7873369 1509334 2018 12 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
A review of doping modulation in graphene
ترجمه فارسی عنوان
بررسی مدولاسیون دوپینگ در گرافن
کلمات کلیدی
گرافن، دوپینگ مهندسی سطح فارمی، جابجایی جایگزین، جذب سطحی، تحریک پذیری،
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد بیومتریال
چکیده انگلیسی
Graphene is one of the most promising materials for post-silicon electronics and has outstanding physical and electronic properties. In particular, its unique 2D sp2-hybridized networks of carbon atoms arranged in a honeycomb lattice make graphene potential for exceptional electronic quality. However, in order to use graphene in possible applications such as photodetector, photovoltaics, sensors, organic light-emitting diodes, organic thin-film transistors, supercapacitor, and catalytic applications, it is essential to precisely modulate its electronic properties, i.e. doping. In this review, we present various strategies for engineering the Fermi level in graphene, including heteroatom substitution, molecular adsorption, introducing functional molecules for external stimuli responsiveness. We anticipate that the current review provides a concise information on the methods to probe doping level, effective doping approaches, and achievable doping type and charge carrier concentration ranges so that an appropriate doping approach can be readily designed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Synthetic Metals - Volume 244, October 2018, Pages 36-47
نویسندگان
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