کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7873378 | 1509334 | 2018 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Hole mobility and conductance of iridium complex doped NPB emission layers for organic light-emitting diodes
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
بیومتریال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Hole mobility and conductance of iridium complex doped NPB emission layers for organic light-emitting diodes Hole mobility and conductance of iridium complex doped NPB emission layers for organic light-emitting diodes](/preview/png/7873378.png)
چکیده انگلیسی
Iridium complexes are widely used in dye phosphorescent guest-host systems which usually as emission layer of efficient organic light-emitting diodes. Phosphorescent organic light-emitting diodes (OLEDs) with tris(2-phenylpyridine) iridium [Ir(ppy)3] as emissive dopant exhibited high internal quantum efficiency. N, N-diphenyl-N, N-bis(1-naphthylphenyl)-1,1-biphenyl-4,4-diamine (NPB) is a good candidate of host for guest-host system in OLEDs. It is significant that understanding and engineering of charge transport in Ir(ppy)3 doped NPB films to design and optimize OLEDs, even organic lasers. In this paper, hole mobility and conductance of Ir(ppy)3 doped NPB films were investigated by admittance spectroscopy. The results show that for a given applied voltage, with the doping concentration increasing, the conductance first increase reaching a maximum then decrease, which indicate that light doping of NPB with Ir(ppy)3 weakly improves, while heavy doping deteriorates the conductivity. We found that light doping of NPB with Ir(ppy)3 almost do not alter the hole mobility, which coincides with the previous theory. It is concluded that for films thinner than 300â¯nm, the electric field dependence of hole mobility is negative, that is, the mobility decrease, rather than increase, near exponentially with the square root of the electric field.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Synthetic Metals - Volume 244, October 2018, Pages 61-65
Journal: Synthetic Metals - Volume 244, October 2018, Pages 61-65
نویسندگان
Ying Wang, Rongzheng Ding, Fobao Huang, Dongge Ma,