کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7874762 | 1509436 | 2011 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Rectification and barrier height inhomogeneous in Rhodamine B based organic Schottky diode
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
بیومتریال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Rectification and barrier height inhomogeneous in Rhodamine B based organic Schottky diode Rectification and barrier height inhomogeneous in Rhodamine B based organic Schottky diode](/preview/png/7874762.png)
چکیده انگلیسی
Thermogravimetric analysis (TGA) and X-ray diffraction (XRD) were used to study the structure characterization of the Rhodamine B (Rh.B). The thermal stability and the lattice parameters were calculated using TGA and XRD, respectively. Bulk Al/Rh.B Schottky barrier device was prepared and their properties have been investigated by current density-voltage J-V and capacitance-voltage C-V characteristics in the temperature range 300-400Â K. The device parameters extracted from the J-V and C-V characteristics are strongly influenced by the effect of temperature. The device exhibits a strong rectification characteristic and shows a maximum rectification ratio at â0.15Â V for all the studied temperature range. The results clearly demonstrate that the electron transport at the Al/Rh.B interface is significantly affected by low barrier patches. The discrepancy between Schottky barrier heights (SBHs) obtained from the temperature dependencies of both J-V and C-V measurements is explained by the introduction of a spatial distribution of BHs due to the barrier height inhomogeneities that prevail at the Al/Rh.B interface. The deviations of apparent BHs were investigated by considering the microstructure of the Al/Rh.B interface. Moreover, the distribution of carrier concentration through the width of the depletion region is nearly uniform.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Synthetic Metals - Volume 161, Issues 1â2, January 2011, Pages 32-39
Journal: Synthetic Metals - Volume 161, Issues 1â2, January 2011, Pages 32-39
نویسندگان
A.A.M. Farag, I.S. Yahia,