کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7886306 | 1509786 | 2018 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Densification of silicon dioxide formed by plasma-enhanced atomic layer deposition on 4H-silicon carbide using argon post-deposition annealing
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
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چکیده انگلیسی
Post-deposition annealing (PDA) was used to improve gate oxide physical and electrical properties. Deposition was accomplished by plasma-enhanced atomic layer deposition (PEALD). We investigated the densification silicon dioxide (SiO2) formed by PEALD on 4H-silicon carbide (SiC) using PDA without oxidation and nitridation. PDA was conducted at 400-1200â¯Â°C in argon (Ar) ambient. The thickness of the SiO2 was reduced by up to 13.5% after Ar PDA at 1000â¯Â°C. As the temperature of the Ar PDA increased, the etching rate of SiO2 decreased. At temperatures greater than 1000â¯Â°C, the SiO2 etching rate was low compared with that of thermal SiO2. After PDA, the SiO2/4H-SiC interface was smoother than that of thermal SiO2/4H-SiC. The current density versus oxide field and capacitance versus voltage of the SiO2/4H-SiC metal oxide semiconductor (MOS) capacitors were measured. Sufficient densification of SiO2 formed by PEALD on 4H-SiC was obtained using Ar PDA at 1200â¯Â°C.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ceramics International - Volume 44, Issue 12, 15 August 2018, Pages 13565-13571
Journal: Ceramics International - Volume 44, Issue 12, 15 August 2018, Pages 13565-13571
نویسندگان
Suhyeong Lee, Ji Min Kim, Changhyun Kim, Hyunwoo Kim, Hong Jeon Kang, Min-Woo Ha, Hyeong Joon Kim,