کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7886601 | 1509786 | 2018 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Preparation of in situ grown silicon carbide whiskers onto graphite for application in Al2O3-C refractories
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Preparation of in situ grown silicon carbide whiskers onto graphite for application in Al2O3-C refractories Preparation of in situ grown silicon carbide whiskers onto graphite for application in Al2O3-C refractories](/preview/png/7886601.png)
چکیده انگلیسی
C-SiC composite powders were prepared by salt-assisted synthesis from Si powders, graphite, and a molten salt medium (NaCl and NaF) with the molar ratio of Si/C =â¯1/2 at 1300â¯Â°C for 3â¯h. After the C-SiC composite powders part and complete replacement of the graphite, the mechanical properties, oxidation resistance and slag-corrosion resistance of the Al2O3-C materials were studied by scanning electron microscopy (SEM) and energy-dispersive X-ray spectroscopy (EDS), as well as with dedicated equipment. The results indicated that SiC whiskers, with lengths of 10-50â¯nm, formed on the surface of the flake graphite, and the activation energy of oxidation of the C-SiC composite powder increased by 45.72â¯kJâ¯molâ1 as compared to that of flake graphite. Furthermore, the decarburization area and slag erosion area of the Al2O3-C material decreased after 3â¯wt% of C-SiC composite powder was substituted for the flake graphite. Meanwhile, the cold modulus of rupture was maintained when 3â¯wt% of C-SiC composite powder was added. This improved both the oxidation and slag resistance of the Al2O3-C materials.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ceramics International - Volume 44, Issue 12, 15 August 2018, Pages 13944-13950
Journal: Ceramics International - Volume 44, Issue 12, 15 August 2018, Pages 13944-13950
نویسندگان
Zhenglong Liu, Chengji Deng, Chao Yu, Xing Wang, Jun Ding, Hongxi Zhu,