کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7887306 | 1509790 | 2018 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Enhanced dielectric properties of Ca2+ doped Li-Al-Si photoetchable glass
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
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چکیده انگلیسی
The Li-Al-Si photoetchable glass (PEG) easily forms a complex three-dimensional (3D) structure, which is promising as an interposer in 3D integrated microsystems. However, its dielectric loss is rather large (~10â2@ 1â¯GHz), which inhibits the corresponding application in radio frequency (RF) microsystems. In this paper, the enhancement of dielectric properties caused by of Ca doping on the microstructure of the Li-Al-Si photoetchable glass system was investigated. The structure and performance were analyzed through X-ray diffraction (XRD), Mid-infrared spectroscopy analysis (MIR), Raman spectroscopy and impedance analysis. The results demonstrated that a significant modification in the dielectric properties were obtained with dielectric loss of 3 à 10â3. The reason was attributed to the decreased number of the non-oxygen bridge, which makes the structure more stable. Using hydrofluoric (HF) etching, through glass vias with a diameter of 117â¯Âµm were obtained.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ceramics International - Volume 44, Issue 8, 1 June 2018, Pages 8756-8760
Journal: Ceramics International - Volume 44, Issue 8, 1 June 2018, Pages 8756-8760
نویسندگان
Tianpeng Liang, Jihua Zhang, Hongwei Chen, Peng Zhang, Haolin Zhao, Gongwen Gan,