کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7888227 | 1509793 | 2018 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of seed layers on low-temperature, chemical bath deposited ZnO nanorods-based near UV-OLED performance
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effect of seed layers on low-temperature, chemical bath deposited ZnO nanorods-based near UV-OLED performance Effect of seed layers on low-temperature, chemical bath deposited ZnO nanorods-based near UV-OLED performance](/preview/png/7888227.png)
چکیده انگلیسی
Low-temperature wet chemical bath deposition (CBD) method is one of the most efficient and least hazardous solution-based techniques which is widely employed to grow ZnO NRs. In CBD method, a seed layer is usually deposited on the substrate. In this paper, high quality ZnO and aluminum doped ZnO (AZO) seed layers are sputtered on the indium tin oxide (ITO) coated glass. In continue, aligned ZnO NRs are grown on the AZO and ZnO seed layers via CBD technique. The effect of the growth time and seed layer on the physical properties of as-grown ZnO NRs are investigated. According to the results, the seed layer plays an essential role on the growth orientation and growth rate of the ZnO NRs. The ZnO NRs grown on AZO seed layer are more aligned rather than ZnO seed layer due to their higher texture coefficients. The relative photoluminescence (PL) intensity ratio of near band emission (NBE) to deep level emission (DLE) (INBE/IDLE) for the ZnO NRs grown on AZO and ZnO seed layers are calculated as 7.45 and 2.62, respectively. To investigate the performance of the as-grown ZnO NRs, near ultraviolet organic light-emitting diodes (UV-OLEDs) using ZnO NRs array as n-type material and poly [2-methoxy-5-(2-ethyl-hexyloxy)-1,4-phenylene-vinylene] (MEH-PPV) conjugated polymer as p-type material have been fabricated. The total concentration of traps (Nt), the characteristic energies (Et) and the turn-on voltages for the devices with the structures of ITO/AZO/ZnO NRs/MEH-PPV/Al (device A) and ITO/ZnO/ZnO NRs/MEH-PPV/Al (device B) are attained 7.65 Ã 1016 and 7.75 Ã 1016Â cmâ3, 0.232 and 0.206Â eV, 23 and 21Â V, respectively. Moreover, based on the electroluminescence (EL) spectra, the NBE peaks for device A and B are obtained nearly in the wavelengths of 382 and 388Â nm, respectively. Finally, various charge carrier transportation processes of prepared UV-OLEDs have been studied, systematically.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ceramics International - Volume 44, Issue 5, 1 April 2018, Pages 4937-4945
Journal: Ceramics International - Volume 44, Issue 5, 1 April 2018, Pages 4937-4945
نویسندگان
Mahdiyar Nouri Rezaie, Negin Manavizadeh, Fatemeh Dehghan Nayeri, Maryam Massah Bidgoli, Ebrahim Nadimi, Farhad Akbari Boroumand,