کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7888490 | 1509795 | 2018 | 28 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of Cu doping on the structural, magnetic and magnetocaloric properties of La0.7Sr0.25Na0.05Mn1âxCuxO3 manganites
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effect of Cu doping on the structural, magnetic and magnetocaloric properties of La0.7Sr0.25Na0.05Mn1âxCuxO3 manganites Effect of Cu doping on the structural, magnetic and magnetocaloric properties of La0.7Sr0.25Na0.05Mn1âxCuxO3 manganites](/preview/png/7888490.png)
چکیده انگلیسی
The effect of Cu doping on structural, magnetic and magnetocaloric properties in La0.7Sr0.25Na0.05Mn1âxCuxO3 (x = 0, 0.05, 0.10, 0.15, 0.20) has been investigated. The samples were prepared by conventional solid-state reaction. Analysis of XRD patterns indicates that the samples are crystallized in a rhombohedral perovskite structure with R 3Ì
c space group. Rietveld refinements reveal that the lattice parameter a and unit cell volume gradually increase up to x = 0.10 then decrease, while parameter c decreases with increasing Cu content. XPS spectra exhibit the coexistence of the Cu2+ and Cu3+ ions in the samples with x=0.15 and 0.20. Magnetization measurements show the Curie temperature Tc and the maximum magnetic entropy change ÎSM decrease with the increase in the Cu content, whereas the relative cooling power (RCP) is basically unaffected. The La0.7Sr0.25Na0.05Mn0.9Cu0.1O3 sample shows a maximum ÎSM of 1.75Â JÂ kgâ1Â Kâ1 and a RCP of 87Â JÂ kgâ1 at 320Â K under a magnetic field change of 20Â kOe, and can be one of the potential magnetic refrigerant materials for near room temperature application.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ceramics International - Volume 44, Issue 3, 15 February 2018, Pages 2797-2802
Journal: Ceramics International - Volume 44, Issue 3, 15 February 2018, Pages 2797-2802
نویسندگان
Z. Liu, W.G. Lin, K.W. Zhou, J.L. Yan,