کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7888535 | 1509794 | 2018 | 35 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of electric field and current on the strength of depoled GaN piezoelectric semiconductive ceramics
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
By using three-point bending tests, the effects of an applied DC electric field and current on the strength of depoled GaN piezoelectric semiconductive ceramics are investigated. Under combined mechanical-voltage-electrical current loading, the corresponding stress and electric fields and carrier distribution in specimens are analyzed based on the finite element method. It is shown that, when an electric field of 0.95Â kVÂ cm-1 is applied, the bending strength decreases by 14.7% and then, remains unchangeable with further increase of the electric field. In contrast, the bending strength decreases from 11.5 to 8.5Â MPa as the applied electric current increases from 0 to 5 Ã 104Â AÂ m-2. The results imply that there is a strong correlation between the bending strength and electric field or current for piezoelectric semiconductive ceramics.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ceramics International - Volume 44, Issue 4, March 2018, Pages 4169-4175
Journal: Ceramics International - Volume 44, Issue 4, March 2018, Pages 4169-4175
نویسندگان
GuoShuai Qin, ShuaiJie Ma, Chunsheng Lu, Gang Wang, MingHao Zhao,