High tunability in (1 1 0)-oriented BaZr0.2Ti0.8O3 (BTZ) lead-free thin films fabricated by pulsed laser deposition

Using a pulsed laser deposition method the BaZr0.2Ti0.8 O3 (BTZ) lead-free thin films with a thickness of ~250 nm were grown on FTO, ITO and Pt-Si substrates, respectively. The analysis results of microstructural, dielectric properties and leakage current reveal that the thin films deposited on Pt-Si substrates are oriented growth along the (1 1 0) direction and exhibit the optimal performance characteristics. Calculations of figure of merit (FoM) and dielectric tunability display a maximum value of ~42.8 and ~68.5% at E = 400 kV/cm at room temperature, respectively. The excellent tunable properties, high dielectric constant (~635@ 100 kHz) and low leakage current density of (9.3 × 10-8 A/cm2 at 400 kV/cm) make the (1 1 0)-oriented BaZr0.2Ti0.8 O3 thin film to be an attractive material for applications of tunable devices.