کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7889082 | 1509797 | 2018 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The effect of solvent water content on the dielectric properties of Al2O3 films grown by atmospheric pressure mist-CVD
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Aluminum oxide (Al2O3) dielectric layers were grown by a mist-chemical vapor deposition (mist-CVD) process at 300 °C, using solvent mixtures containing acetone and water. As the acetone to water ratio was varied from 9:1 to 7:3, the leakage current of Al2O3 at an electric field of 7 MV/cm2 decreased from 9.0 à 10â7 to 4.4 à 10â10 A/cm2, and the dielectric constant increased from 6.03 to 6.85 with improved hysteresis during capacitance-voltage measurements. Consequently, the most robust Al2O3 films were obtained at an acetone to water ratio of 7:3, with a dielectric constant (κ) close to the ideal value 7.0, and a breakdown field of approximately 9 MV/cm. Thin film transistors (TFTs) incorporating In-Sn-Zn-O (ITZO) as the semiconductor were fabricated with the Al2O3 (7:3) dielectric onto p++-Si substrates. The devices exhibit high electrical performance, with a high field effect mobility of 42.7 cm2Vâ1sâ1, and a small subthreshold swing (S.S.) value of 0.44 V/decade.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ceramics International - Volume 44, Issue 1, January 2018, Pages 459-463
Journal: Ceramics International - Volume 44, Issue 1, January 2018, Pages 459-463
نویسندگان
Dong-Hyun Kim, Hyun-Jun Jeong, Jozeph Park, Jin-Seong Park,