کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7897755 | 1510128 | 2018 | 11 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Oxidation of Ã-SiC at high temperature in Ar/O2, Ar/CO2, Ar/H2O gas mixtures: Kinetic study of the silica growth in the passive regime
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
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چکیده انگلیسی
The kinetics of silica growth during passive oxidation of SiC was studied using an original interferometric method carried out in a reactor specifically designed for that purpose. The influence of various oxidant species, O2, H2O, CO2 as well as their mixtures was investigated in a high temperature domain ranging from 1550 °C to 1850 °C at atmospheric pressure. This method is an efficient way to measure the various oxidation regimes usually described by the Deal-Grove model. Both the linear and parabolic rate constants are found to be independent of gas phase composition above 1700 °C, and to increase with oxygen partial pressure below 1700â¯Â°C for PO2â¯>â¯20â¯kPa. In the parabolic growth regime, we observed a transition from a low temperature interstitial-dominant to a high temperature network-dominant oxygen transport in the silica scale. The present results suggest the existence of a similar transition in the linear growth regime.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of the European Ceramic Society - Volume 38, Issue 13, October 2018, Pages 4309-4319
Journal: Journal of the European Ceramic Society - Volume 38, Issue 13, October 2018, Pages 4309-4319
نویسندگان
Mathieu Q. Brisebourg, Francis Rebillat, Francis Teyssandier,