کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7900030 | 1510360 | 2018 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of thermal and compositional variations on conduction mechanisms and localized state density of amorphous Cd50S50âxSex thin films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
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چکیده انگلیسی
This work reports the study of dc-electrical conductivity of the amorphous chalcogenide Cd50S50âxSex (30â¯â¤â¯Ãâ¯â¤â¯50â¯at.%) thin films and its dependent upon the temperature and composition. Thin films were prepared by the thermal evaporation process onto normal glass substrates in a vacuum about 8.2â¯Ãâ¯10â4â¯Pa. The deposition rate and the film thickness were maintained constant at about 8â¯nm/s and 200â¯nm, respectively. X-ray diffraction was used to check the amorphous nature of thin-film samples. The resistance of the film samples has been measured in the temperature range 293â¯K to 473â¯K by using the two-point probe technique. DC-electrical conductivity was determined from the resistance measurements. The sheet resistance, the conduction mechanisms, activation energies, Mott parameters, barrier potential energy, trapping state energy and the density of localized states near the Fermi level, were investigated and studied. Obtained electrical data of the ternary Cd-S-Se thin films were investigated and studied in terms of Mott's variable range hopping model. All studied electrical parameters were found to be strongly dependent on the Se-content.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Non-Crystalline Solids - Volume 487, 1 May 2018, Pages 28-36
Journal: Journal of Non-Crystalline Solids - Volume 487, 1 May 2018, Pages 28-36
نویسندگان
Ahmed Saeed Hassanien, Alaa Ahmed Akl,