Keywords: نیمه هادی آمورف; Visible light photocatalysis; Mechanism; Activation; Amorphous semiconductor; In situ DRIFT;
مقالات ISI نیمه هادی آمورف (ترجمه نشده)
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Keywords: نیمه هادی آمورف; Amorphous semiconductor; Glass transition; Oxide glass; Raman spectroscopy; FTIR
Keywords: نیمه هادی آمورف; InGaZnO; Spectroscopic ellipsometry; Dielectric function; Process deposition; Amorphous semiconductor;
Keywords: نیمه هادی آمورف; Organic Thin Film Transistor (OTFT); Modeling; Transport; Amorphous semiconductor; Temperature
Keywords: نیمه هادی آمورف; Amorphous semiconductor; Electronic transport; Thin-film transistor; Mobility
Influence of thermal and compositional variations on conduction mechanisms and localized state density of amorphous Cd50S50âxSex thin films
Keywords: نیمه هادی آمورف; Amorphous semiconductor; DC-electrical conductivity; Mott's parameters; Density of localized states; Hopping conduction Space charge limited conduction; Thin films;
Photophysical properties and photoelectrochemical performances of sol-gel derived copper stannate (CuSnO3) amorphous semiconductor for solar water splitting application
Keywords: نیمه هادی آمورف; CuSnO3; Amorphous semiconductor; Sol-gel method; Band structure; Photoelectrochemical performance; Heterojunction;
Low-field transport in SiO2
Keywords: نیمه هادی آمورف; Electronic transport; Mobility; Amorphous semiconductor; Silicon dioxide;
Study of Se based quaternary SePb(Bi,Te) chalcogenide thin films for their linear and nonlinear optical properties
Keywords: نیمه هادی آمورف; Amorphous semiconductor; Thin film; Linear and nonlinear refractive index; Optical band gap81.05.Gc; 42.65.−k; 42.65.An; 42.70.N
Effect of Zinc additive on dielectric properties of Cd-Se glassy system
Keywords: نیمه هادی آمورف; Amorphous semiconductor; Localized states; DC conductivity; Dielectric constant; Dielectric loss;
Amorphous Y–Ba–Cu–O oxide thin films: Structural, electrical and dielectric properties correlated with uncooled infrared pyroelectric detection performances
Keywords: نیمه هادی آمورف; YBCO; Amorphous semiconductor; Conductivity; Dielectric relaxation; Correlated barrier hopping model; Schottky contact; Uncooled pyroelectric detector; Low noise fast detection
Al-induced crystallization of amorphous SixGe1-x (0 ⩽ x ⩽ 1): Diffusion, phase development and layer exchange
Keywords: نیمه هادی آمورف; Metal-induced crystallization; Amorphous semiconductor; Silicon germanium; Diffusion; Thin films;
Low temperature amorphous growth of semiconducting Y–Ba–Cu–O oxide thin films in view of infrared bolometric detection
Keywords: نیمه هادی آمورف; Yttrium barium copper oxide; Amorphous semiconductor; Low temperature sputtering deposition; Structural properties; Absorption coefficient; Optical conductivity; Optical band gap; Infrared uncooled thermal detector
Radiofrequency dielectric properties of amorphous semiconducting Y-Ba-Cu-O oxide thin films for bolometric detection
Keywords: نیمه هادی آمورف; Dielectric properties; YBCO; Amorphous semiconductor; Dielectric relaxation; Permittivity; Debye model; Infrared uncooled bolometer; Heat diffusion;
Sputtering deposition of amorphous cadmium stannate as transparent conducting oxide
Keywords: نیمه هادی آمورف; Cadmium stannate; Transparent conducting oxide; Sheet resistance; Transmittance; Amorphous semiconductor; Ilmenite;
Effect of molybdenum tri-oxide molar ratio on the optical and some physical properties of tellurite–vanadate–molybdate glasses
Keywords: نیمه هادی آمورف; Amorphous semiconductor; Optical gap measurement; Glasses; Band tailing
Electrochemical growth of synthetic melanin thin films by constant potential methods
Keywords: نیمه هادی آمورف; Melanin; Electrochemical oxidation; THAM buffer; Polymerization; Amorphous semiconductor;
Structural and electronic properties of amorphous InSb from first principles study
Keywords: نیمه هادی آمورف; Amorphous semiconductor; Coordination number; Density of states; Modification phenomenon
Electrical transport mechanisms in a-Se95M5 films (M = Ga, Sb, Bi)
Keywords: نیمه هادی آمورف; Amorphous semiconductor; DC conductivity; Mott's parameters; Density of states; Hoping conduction Space charge limited conduction; Thin films61.43.Dq; 71.23.Cq; 72.15.Cz; 73.61.Jc
Step toward robust and reliable amorphous polymer field-effect transistors and logic functions made by the use of roll to roll compatible printing processes
Keywords: نیمه هادی آمورف; Organic field-effect transistors; Amorphous semiconductor; Gravure printing; Screen printing
Transparent, high mobility InGaZnO thin films deposited by PLD
Keywords: نیمه هادی آمورف; AOS; Amorphous semiconductor; Amorphous oxide semiconductor; IGZO; a-IGZO; PLD; Mobility; Transparent conducting oxide; TCO
Specific contact resistances between amorphous oxide semiconductor In–Ga–Zn–O and metallic electrodes
Keywords: نیمه هادی آمورف; Amorphous semiconductor; Inorganic semiconductor; Contact resistance; Thin film transistor
Effect of Sb impurity on the photoelectrical properties of a-Se
Keywords: نیمه هادی آمورف; PACS: 61.43.Dq; 81.05.Gc; 73.61.Jc; Amorphous semiconductor; Chalcogenide glasses; Thin films; Dark conductivity; Photoconductivity;
Fabrication of transparent conducting amorphous Zn–Sn–In–O thin films by direct current magnetron sputtering
Keywords: نیمه هادی آمورف; Transparent conducting oxide; Indium tin oxide; Amorphous semiconductor; physical vapor deposition; Photoelectron spectroscopy; Work function; Optical properties; Hall Effect
Effect of In incorporation on optical properties of amorphous Se–Ge thin films
Keywords: نیمه هادی آمورف; Chalcogenide glasses; Amorphous semiconductor; Optical properties and optical band gap
Dielectric relaxation in the glassy a-Se-Te-Ga system
Keywords: نیمه هادی آمورف; 71.23.Cq; 73.50.Mx; 73.61.Jc; 78.66.Jg; Amorphous semiconductor; Dielectric constant; Dielectric loss; DC conductivity; Dielectric relaxation;
Magneto-transport properties of amorphous Ge1−xMnx thin films
Keywords: نیمه هادی آمورف; 75.50.Pp; 75.60.EjMagnetic semiconductor; Spintronics materials; GeMn semiconductors; Amorphous semiconductor
Effect of silver on dielectric properties of the Se-Te system
Keywords: نیمه هادی آمورف; 77.22.âd; 77.22.Gm; 78.66.Jg; Amorphous semiconductor; Dielectric constant; Dielectric loss; DC conductivity;
Memory switching of germanium tellurium amorphous semiconductor
Keywords: نیمه هادی آمورف; Amorphous semiconductor; dc conductivity; Switching phenomena;