Transparent, high mobility InGaZnO thin films deposited by PLD

Transparent oxide semiconductor, InGaZnO, thin films were prepared by pulsed laser deposition at room temperature. The carrier concentration was found to vary by several orders of magnitude from insulating to 1019 carriers/cm3 depending on the oxygen partial pressure during deposition. Hall mobilities as high as 16 cm2/V s were observed. This is approximately an order of magnitude higher than the mobility of amorphous silicon and indicates that InGaO3(ZnO)x with x ≤ 5 may be suitable for transparent, thin film transistor applications. Post-deposition annealing was found to strongly influence the carrier concentration while annealing effects on the electron mobility was less influential.