Ellipsometry study of process deposition of amorphous Indium Gallium Zinc Oxide sputtered thin films

This paper reports on an InGaZnO optical study by spectrometric ellipsometry. First of all, the fitting results of different models and different structures are analysed to choose the most appropriate model. The Tauc-Lorentz model is suitable for thickness measurements but a more complex model allows the refractive index and extinction coefficient to be extracted more accurately. Secondly, different InGaZnO process depositions are carried out in order to investigate stability, influence of deposition time and uniformity. Films present satisfactory optical stability over time. InGaZnO optical property evolution as a function of deposition time is related to an increase in temperature. To understand the behaviour of uniformity, mapping measurements are correlated to thin film resistivity. Results show that temperature and resputtering are the two phenomena that affect IGZO uniformity.