کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1548208 | 997726 | 2015 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of Zinc additive on dielectric properties of Cd-Se glassy system
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effect of Zinc additive on dielectric properties of Cd-Se glassy system Effect of Zinc additive on dielectric properties of Cd-Se glassy system](/preview/png/1548208.png)
چکیده انگلیسی
Cd5Se95-xZnx (x=0, 2, 4, 6) glassy alloy has been prepared by a melt-quenching technique. Thin films were deposited by thermal coating unit on ultraclean glass substrate under a vacuum of 10-6Â Torr. The absence of any sharp peaks in the X-ray diffraction confirms the amorphous nature of thin films. The frequency and temperature dependence of dielectric constant and dielectric loss in the frequency range of 1Â kHz to 1Â MHz and in the temperature range of 290-370Â K were studied. Dielectric dispersion was observed when Zinc (Zn) was incorporated into the Cd-Se system. The increase in dielectric parameter with Zn concentration may be due to increase in defect states. The DC conductivity has been reported to investigate the effect of Zn concentration on DC conduction loss. The results are interpreted in term of dipolar theory for Cd5Se95 and Cd5Se93Zn2 samples, while the remaining samples have been explained on the basis of DC conduction loss. It was also observed that the DC conductivity increased with the increase of Zinc concentration, which may be due to the decrease in the band gap near Fermi level.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Progress in Natural Science: Materials International - Volume 25, Issue 3, June 2015, Pages 222-228
Journal: Progress in Natural Science: Materials International - Volume 25, Issue 3, June 2015, Pages 222-228
نویسندگان
Mohsin Ganaie, M. Zulfequar,