کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1812609 | 1025619 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structural and electronic properties of amorphous InSb from first principles study
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Structural and electronic properties of amorphous InSb from first principles study Structural and electronic properties of amorphous InSb from first principles study](/preview/png/1812609.png)
چکیده انگلیسی
The model for amorphous semiconductor InSb (a-InSb) was constructed through the first principles calculations, based on the idea of “continuous random networks” (CRN). The results of structural parameters for a-InSb are in agreement with the available data both theoretically and experimentally. The structure of a-InSb is almost tetrahedrally bonded with a perfect average coordination number of four. Due to the influence of the disorders, the density of states for a-InSb has the smearing structure in contrast to crystalline InSb (c-InSb). As a consequence of the induction of disorders, modification phenomena occur at the band edge of a-InSb in contrast to that of c-InSb.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 405, Issue 10, 15 May 2010, Pages 2481–2484
Journal: Physica B: Condensed Matter - Volume 405, Issue 10, 15 May 2010, Pages 2481–2484
نویسندگان
L. Wang, X.S. Chen, Y. Huang, W. Lu, J.J. Zhao,