The nc-Si films with controlled crystal structure and electrical conductivity via the re-crystallization approach

► The nc-Si films with controlled microstructure and electrical conductivity (σ) ► The crystal size was controlled at ~ 5 nm at the controlled process condition. ► Logarithm of σ is linearly proportional to the crystallized fraction under the circumstance above. ► RTP enhanced the recrystallization and conductivity of the Si films.