کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7908447 1510776 2016 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Piezoelectric field effect on the optical properties of In0.21Ga0.79As/GaAs (113) MQW
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Piezoelectric field effect on the optical properties of In0.21Ga0.79As/GaAs (113) MQW
چکیده انگلیسی
Photoluminescence study PL has been performed for the In0.21Ga0.79As multiple quantum wells MQW grown by molecular beam epitaxy MBE on (001) and (113) A GaAs substrates. The electronic structure was obtained by solving the Schrödinger equation, including piezoelectric field and strain effect on the conduction and valence bands of the unequal QWs. We critically review the explanation of S-shape in temperature dependence of PL peak energy for polar Middle In0.21Ga0.79As QW at intermediate temperatures. This abnormal behavior is merely linked to the impact of carrier localization and polarization-induced electric fields in optical properties. A significant blue shift of 18 meV for polar and a negligible shift for non-polar In0.21Ga0.79As/GaAs Middle QW has been observed. In order to follow the evolution of the PL peak energies for each QW in both samples versus temperature, three theoretical models (Varshni, Vïna and Pässler) have been reported. A comparison between theoretical and experimental data demonstrates that the Pässler model is the most accurate fit despite none of the classical models can replicate the excitonic PL energy evolution at cryogenic temperature for Middle QW in the structure grown on (113).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optical Materials - Volume 58, August 2016, Pages 121-127
نویسندگان
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