کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7908670 | 1510776 | 2016 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Temperature-dependent spectroscopy and microchip laser operation of Nd:KGd(WO4)2
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
High-resolution absorption and stimulated-emission cross-section spectra are presented for monoclinic Nd:KGd(WO4)2 (Nd:KGW) laser crystals in the temperature range 77-450 K. At room-temperature, the maximum stimulated emission cross-section is ÏSE = 21.4 Ã 10â20 cm2 at 1067.3 nm, for light polarization E || Nm. The lifetime of the 4F3/2 state of Nd3+ in KGW is practically temperature independent at 115 ± 5 μs. Measurement of the energy transfer upconversion parameter for a 3 at.% Nd:KGW crystal proved that this was significantly smaller than for alternative hosts, â¼2.5 Ã 10â17 cm3/s. When cut along the Ng optical indicatrix axis, the Nd:KGW crystal was configured as a microchip laser, generating â¼4 W of continuous-wave output at 1067 nm with a slope efficiency of 61% under diode-pumping. Using a highly-doped (10 at.%) Nd:KGW crystal, the slope efficiency reached 71% and 74% when pumped with a laser diode and a Ti:Sapphire laser, respectively. The concept of an ultrathin (250 μm) Nd:KGW microchip laser sandwiched between two synthetic diamond heat-spreaders is demonstrated.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optical Materials - Volume 58, August 2016, Pages 365-372
Journal: Optical Materials - Volume 58, August 2016, Pages 365-372
نویسندگان
P. Loiko, S.J. Yoon, J.M. Serres, X. Mateos, S.J. Beecher, R.B. Birch, V.G. Savitski, A.J. Kemp, K. Yumashev, U. Griebner, V. Petrov, M. Aguiló, F. DÃaz, J.I. Mackenzie,