Self-catalytic VLS growth one dimensional layered GaSe nanobelts for high performance photodetectors

Layered GaSe is an important binary semiconductor because of its anisotropic crystallography characteristics, wide band gap and attractive optical and electrical properties. Here, we report the self-catalytic growth of GaSe nanobelts via a simple chemical vapor deposition method. The quality of the as-grown nanobelts have been confirmed by transmission electron microscope and photoluminescence spectra. The field-effect transistors based on these individual GaSe nanobelts have been fabricated and show p-type semiconducting behaviors and on-off ratio of 106. The GaSe nanobelts not only show good responsivity of 164.4 A W−1, but also exhibit excellent stability and reliability, which are superior to their bulk counterparts. These results make GaSe nanobelt a promising optoelectronic material in integrated electronic/optoelectronic devices.