Structural, electronic, magnetic and optical properties of semiconductor Zn1−xMoxTe compound

The charge density isosurfaces of 0.005 e/Å3 at CBM (a) and VBM (b) in spin-down channel, as well as the isosurfaces ± 0.006 e/Å3 of the charge density difference with yellow and cyan isosurfaces for charge gain and loss (c) for the HM Zn0.75Mo0.25Te system.284