کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7921151 | 1511744 | 2018 | 20 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characterization of graphene synthesized by low-pressure chemical vapor deposition using N-Octane as precursor
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
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چکیده انگلیسی
We report single-layer graphene synthesis using high-carbon content N-Octane as precursor. Unlike methanol, ethanol and other liquid carbon precursors, N-Octane is oxygen free and its molecular structure is simply a common hydrocarbon. Optimal precursor pressure for synthesis was found to be at 5-20 mTorr range, as at higher partial pressures we have achieved bilayer and few-layer coverage of the copper substrates with {111} plane parallel to the surface, as revealed by Raman spectroscopy. We could lower the synthesis temperature down to 850â¯Â°C and still obtained graphene layers with low concentration of defects. For the complete coverage of the substrates, we report shorter than usual synthesis time, of no more than 5â¯min. Characterization of graphene layers were performed using Raman scattering spectroscopy and mapping, UV-vis transmittance as well as atomic force microscopy, scanning tunneling microscopy and scanning tunneling spectroscopy.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Chemistry and Physics - Volume 219, 1 November 2018, Pages 189-195
Journal: Materials Chemistry and Physics - Volume 219, 1 November 2018, Pages 189-195
نویسندگان
André do Nascimento Barbosa, N.J.S. Figueroa, C.D. Mendoza, A.L. Pinto, F.L. Jr.,