کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7923065 | 1511801 | 2015 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Frequency response modeling and optimization of a PIN photodiode based on GaN/InGaN adapted to photodetection at a wavelength of 633Â nm
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
In this paper, the frequency response calculation and optimization of PIN photodiodes based on GaN/InGaN, suitable for photodetection at the wavelength of 633Â nm, are presented. The calculations of the impulse as well as the frequency response are performed using the impulse method. The frequency response optimization is a result of optimizing the transport of photo-generated carriers in the absorbent layer of the photodiode, using a mixed depletion region rather than a single absorbing depletion region. Cut-off frequencies of about 82Â GHz and 48Â GHz have been obtained in the case of transparent layer thickness of 500Â nm and 1000Â nm, respectively. The aforementioned results represent a very good improvement.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Chemistry and Physics - Volume 162, 15 July 2015, Pages 525-530
Journal: Materials Chemistry and Physics - Volume 162, 15 July 2015, Pages 525-530
نویسندگان
M. El Besseghi, A. Aissat, B. Alshehri, K. Dogheche, E.H. Dogheche, D. Decoster,